Single-phase Glass Passivated Mini Silicon SMD Diode Bridge Rectifier MB1S MB6S MB10S
FEATURES
1. Surage overload rating-30 Amperes peak
2. Ideal for printed circuit board
3. Reliable low cost construction utilizing molded
4. Glass passived device
5. Polarity symbols molded on body
6. Mounting position : Any
7. Weight: 0.5 gram
Mechanical Data
Epoxy: Device has UL flammabiltiy classification 94V-0
UL listed the recognized component directory,file#E94233
Maximum Ratings
| Catalog Number | Device Marking | Maximum Rccurrent Peak Reverse Voltage | Maximum RMS Voltage | Maximum DC Blocking |
| MB05S | MB05S | 50V | 35V | 50V |
| MB1S | MB1S | 100V | 70V | 100V |
| MB2S | MB2S | 200V | 140V | 200V |
| MB4S | MB4S | 400V | 280V | 400V |
| MB6S | MB6S | 600V | 420V | 600V |
| MB8S | MB8S | 800V | 560V | 800V |
| MB10S | MB10S | 1000V | 700V | 1000V |
Electrical Characteristics @ 25°C Unless Otherwise Specified
| Average Forward Current | IF(AV) | 0.5A 0.8A | Note1 TA = 30°C Note2 TA = 30°C |
| Peak Forward Surge Current | IFSM | 30A | 8.3ms, half sine |
| Maximum Instantaneous Forward Voltage | VF | 1.0V | IFM = 0.5A; TA = 25°C |
| Maximum DC Reverse Current At Rated DC Blocking Voltage | IR | 5 mA | TA = 25°C |
| Typical Junction Capacitance | CJ | 25pF | Measured at 1.0MHz, VR=4.0V |
Note1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
Note2. On alum: substrate P.C.B with an rea of 0.8 x 0.8 x 0.25”
( 20 x 20 x 6.4mm ) mounte on 0.05 x 0.05 “( 13 x 13 mm ) solder pad.
Pulse Test: Pulse Width 300msec, Duty Cycle 1%
Size:
Why choose us?
1. ISO9001:2008 certified factory
2. 20 years rich experience in the diode production
3. Strict quality control, achieve customer's maximum satisfaction
4. The Annual production capacity is over 2 billion
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Glass Passivated SMD Diode Bridge Rectifier MB1S MB6S MB10S For Printed Circuit Board Images
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